For very high speed mixed-signal ICs for test instruments and and 40-100G Transimpedance Amplifier (TIA) for optical fiber communication applications, two generations (5 processes) of InP HBT technologies have been developed with fT from 110 GHz to 330 GHz. Superior performance has been demonstrated by customers and several has been in production since 2007.
| HBT Parameters | Units | DHBT3 | DHBT3B |
|---|---|---|---|
| Emitter width | (um) | 0.8 | 0.6 |
| Typical operating current density | Jctyp (mA/um2) | 2 | 2 |
| Maximum operating current density | Jcmax (mA/um2) | 3 | 3 |
| Typical operating voltage | Vce (V) | 1 | 1 |
| Base-collector breakdown voltage | BVcbo (V) | 4.5 | 4.5 |
| Collector-emitter breakdown voltage | BVceo (V) | 3.8 | 3.8 |
| Emitter-base breakdown voltage | BVbeo (V) | 3.2 | 3.2 |
| Thermal resistance | Rth (°C/mW) | 5.3 | 5.3 |
| fT (at max allowed operating current) | (GHz) | 290 | 340 |
| fmax (at max allowed operating current) | (GHz) | 250 | 450 |
DHBT5
- DHBT5 InP HBT technology is ideal for 5G PA applications at mm-wave frequency
- High breakdown voltage
- High power density, high gain and efficiency, good linearity
- Proven reliability
- Available for immediate design
Typical Applications:
- mm-wave MMICs:
- 5G power amplifier
- Integrated IC with digital control
Features:
- High power density
- Positive bias voltage
- Can add digital functions
