- Optical Gate Lithography for Low-Cost Manufacturing
- Options of Enhancement and Depletion Modes
- Ideal for LNA, Gain Block, and Low-Power Digital Functions
- Meets or Exceeds Environmental Requirements
For Applications up to Ku-Band:
- Low Noise Amplifiers
- Driver Amplifiers
- Gain Blocks
- Transceiver Components
- Switches
- Low-Power digital control function
Features:
- AlGaAs/InGaAs/GaAs Material
- Optical T-Gate Stepper Lithography
- Low-Cost Production Process
- Excellent Reliability
Typical Device Performance:
| Parameter | D-Mode | E-Mode |
|---|---|---|
| Imax (mA/mm) | 450 | 380 |
| Idss (mA/mm) | 175 | NA |
| Gm (mS/mm) | 440 | 560 |
| Vp (V) | -0.5 | 0.3 |
| BVgd(V) | >9 | >9 |
| fT (Ghz) | >70 | >75 |
| FMAX (GHz) | >140 | >170 |
| Fmin @ 6 GHz | 0.44 | 0.25 |
| Gassoc @ 6 GHz | 16.4 | 17.3 |
| Fmin @ 12 Ghz | 0.67 | 0.38 |
| Gassoc @ 12 Ghz | 12.4 | 13.5 |
| Fmin @ 18 Ghz | 1.14 | 0.84 |
| Gassoc @ 12 Ghz | 9.2 | 10.6 |
