GaAs pHEMT

• A family of high-performance GaAs/InGaAs pHEMT processes have been specifically developed for different applications
• All processes have passed extensive reliability and environmental stress tests
• All process have been qualified by Tier-one customers and in production
• 0.25µm & 0.5µm D-Mode pHEMT: For RF transceiver components (PA, LNA, Switch, Mixer) of up to 20GHz applications
• 0.25µm & 0.5µm E/D-Mode pHEMT: For monolithic integration of PA, switch, and digital control functions
• 0.1µm pHEMT: Extends D-mode pHEMT to 40GHz applications

GaAs pHEMT family of processes:

• 0.5um D-Mode T-Gate pHEMT
• 0.25um ED_mode Low Noise pHEMT
• 0.25um D-Mode T-Gate pHEMT Power Process
• 0.1µm Low-Noise & Power pHEMTs​