This 0.25um low cost D-Mode T-Gate process has been developed using low cost optical stepper lithography for transceiver components of up to 40 GHz and also for high operating voltage.
025um-dmode-phemt-power-process.pdf
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GCS’ 0.25um T-Gate pHEMT features:
- Low-cost optical stepper lithography process
- Extremely high ƒmax (>200GHz)
- Very high breakdown voltage (>20V)
Small Signal Performance
- fT > 50 GHz
- fmax > 170 GHz
- Gmax > 14.5 dB at 30 GHz
| Device Parameters | Typical Values |
|---|---|
| Idss (mA/mm) | 270 |
| Imax (mA/mm) | 500 |
| Vp (V) | -1 |
| Gm (mS/mm) | 350 |
| BVgd (V) | >18 |