Monolithic THz Mixer Diode
- Schottky Diodes with fco >1 THz and Four Different Barrier Heights
- Choice of stand-alone diode or MMIC Implementation
- Eliminates unwanted parasitics with monolithic integration
- Low conversion loss mm-wave mixer up to W-band
- Meets or exceeds most environmental test requirements
Process Features:
- Planar diode process
- Ideality factor of 1.1
- Choice of turn-on voltage (0.3, 0.5, 0.65, and 0.85V)
- Passive thin-film resistor, MIM capacitor and transmission lines
- Air-bridge or polyimide interconnect options
- Backside via option available
- Mature manufacturing process
Applications:
- Low conversion loss mixers
- Up/down-converters for up to W-Band
- Low LO drive mixer with single, multiple, series or anti-parallel diode configurations
- Monolithically integrated options:
- Passive matching and filtering networks
- HBT or pHEMT integrated circuits
Electrical Characteristics:
| Model Value | ||||||
|---|---|---|---|---|---|---|
| Parameter | Is (fA) | N | Rs (Ohm) | Cjo (fF) @ 0.5Ghz | Cjo (fF) @ 20Ghz | Estimated Fco (Thz)* |
| SBD 1.6x4 | 114 | 1.17 | 6.3 | 16.17 | 19.71 | 1.282 |
| SBD 1.6x6 | 195 | 1.17 | 4.5 | 22.76 | 27.11 | 1.305 |
| SBD 1.6x8 | 255 | 1.17 | 3.6 | 28.85 | 33.21 | 1.332 |
* Estimated values are obtained by using Cjo @ 20Ghz
