Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT)
GCS offers two digital processes (D1 and D5), providing high FT, very low phase noise, integrated varactor and Schottky diodes, ideal for applications such as VCO, tunable filters, and low phase noise amplifiers.
| Parameter | Unit | D1 (High FT) | D5 |
|---|---|---|---|
| Applications | VCO, High-speed Digital and Mixed-signal ICs | Wide Tuning Range VCO, Voltage Tunable MMIC Filters | |
| Current Gain | 150 | 150 | |
| BVceo@ 2A/cm2 | V | 7.5 | 7.0 |
| BVcbo@ 2A/cm2 | V | 17 | 29 |
| Ft at 50KA/cm2 | GHz | 55 | 42 |
| Fmax at 50KA/cm2 | GHz | 65 | 55 |
| Schottky Diode | Yes | Yes | |
| Performance Example | VCO, fo=4.990 to 5.154GHz, Po=9.5Bm, PN=105dBc/Hz @100KHz offset | VCO, PN= 105dBc/Hz @100KHz offset, C/V Tuning Ratio = 5:1 |