High Voltage and GSM InGaP HBT (P5) power processes have been developed specifically for power amplifiers requiring operation at 8-10 volt bias and/or ruggedness under high VSWR conditions. GSM PA has demonstrated superior RF performance and can withstand more than 25:1 VSWR at 5V bias. Linear PA at 9V Vcc and has been demonstrated by customers for Infrastructure Driver Amplifiers. Both Processes have been in mass production since 2001.
High-Ruggedness InGaP HBT
Surpasses GSM PA’s RF Performance and Ruggedness Requirements
PA performance* from 5 consecutive lots
*Measured on the evaluation board (as shown)
- Matched to 50Ώ
- When matched for best power fficiency, PAE ~68%
- Plotted data were not de-embedded
- When de-embedded to device level, PAE ~74%
- Device ruggedness: Survived >25:1 at 5V bias