mmW HBT Process with Super High-ƒmax
- GaAs based HBT with ƒmax Performance Close to InP HBT Technology Super High ƒmax>140 GHz
- Ideal for mmW 5G PA, Low Phase Noise Amplifiers and Gain Blocks
- mmW Frequency Voltage Control Oscillators (VCO)
- Integrated Schottky and Varactor Diodes Available
Typical Applications:
- mmW 5G PA @ 28 GHz
- Low Phase Noise Amplifiers
- Low Phase Noise VCO
- Transceiver MMIC Components
Features:
- HBT ƒmax >140 GHz
- Low 1/f Noise Corner Frequency
- Integrated Schottky Diode with fco~1.6 THz
- Two Processes to Choose from (SD2, SPD)
- Integrated Varactor Diode
Typical Parametric Data
| Parameters | Unit | SD2 | SPC |
|---|---|---|---|
| Current Gain @ 1kA/cm2 | 90.0 | 70.0 | |
| Vbe-on @ 2A/cm2 | V | 1.11 | 1.11 |
| Vce-Offset @ Ib=100uA | V | 0.12 | 0.12 |
| BVbeo @ 2A/cm2 | V | 6.6 | 6.5 |
| BVceo @ 2A/cm3 | V | 8.5 | 13.0 |
| BVcbo @ 2A/cm4 | V | 20.0 | 24.0 |
| Re (2x6um Device) | Ohm | 6.0 | 6.0 |
| Peak ƒT | GHz | 80 | 62 |
| Peak ƒmax | GHz | 140 | 150 |
| Schottky Diode fco | THz | 1.6 | 1.6 |
| Varactor Tuning Ratio | 2.5:1 | -- |
