RF Semiconductor Foundry
Super High-fmax GaAs HBT
GENERATION 2
Process Summary
A GaAs-based HBT technology offering fmax performance approaching InP HBT, with fmax greater than 140 GHz. It is suited for low- to mid-band FR3 5G power amplifiers and supports high-efficiency PA operation up to 18 GHz.
Typical Applications
- FR3 PA up to 18 GHz
Features
- fmax >140 GHz
- High gain = 10 dB at 18 GHz
- High efficiency PAE >50% up to 18 GHz
- High linearity
Device Performance
Device Parameter Data
| Parameters | Unit | SPE |
| Current Gain @ 1kA/cm² | 70.0 | |
| Vbe-on @ 2A/cm² | V | 1.11 |
| Vce-Offset @ Ib=100µA | V | 0.12 |
| BVbeo @ 2A/cm² | V | 6.5 |
| BVceo @ 2A/cm² | V | 13.5 |
| BVcbo @ 2A/cm² | V | 24.0 |
| Re (2x6µm Device) | Ohm | 6.0 |
| Peak fT for 1.2x20 | GHz | 45 |
| Peak fmax for 1.2x20 | GHz | 150 |
| MXP Psat @10GHz Vcc=6V, 8x1.2x20 3F | W | 1.2 |
| MXE PAE @10GHz Vcc=6V, 8x1.2x20 3F | % | 64 |
| MXP Psat @15GHz Vcc=6V, 8x1.2x20 3F | W | 1.0 |
| MXE PAE @15GHz Vcc=6V, 8x1.2x20 3F | % | 51.3 |
| MXP Psat @18GHz Vcc=6V, 4x1.2x15 3F | W | 0.44 |
| MXE PAE @18GHz Vcc=6V, 8x1.2x15 3F | % | 53 |