Indium Gallium Arsenide (InGaAs), P-type, Intrinsic (I), and N-type (PIN) Layer Structure
InGaAs PIN Monitor Photodiodes - Wavelength: 1310nm and 1550nm
| Part Number | Aperture Size | Die Size (um x um) | Thickness (um) | Pad Design | Single/ Array |
|---|---|---|---|---|---|
| DO064_200um_P2 | 200um | 380 x 380 | 150 | P-top, N-bottom | Single |
| DO064_200um_P3 (High ESD Rating) * | 200um | 380 x 380 | 150 | P-top, N-bottom | Single |
| DO213_260umSQ_P2 | 260um (Square) | 380 x 380 | 150 | P-top, N-bottom | Single |
| DO051_300um_P2 | 200um | 460 x 460 | 150 | P-top, N-bottom | Single |
| DO238_500um_P2 | 500um | 720 x 720 | 150 | P-top, N-bottom | Single |
| DO222_1mm_P2 | 1 mm | 1250 x 1250 | 200 | P-top, N-bottom | Single |
| Do237_1.5mm_P2 | 1.5mm | 1750 x 1750 | 240 | P-top, N-bottom | Single |
| DO206_QD_1.5mm_P2 | 1.5mm (4 quadrants) | 1785 x 1785 | 200 | P-top, N-bottom | Single |
| Do380_100um_P2_R (edge-coupled) | 100µm x 60 µm (trapezoidal) | 350 X 350 | 150 | PN-top | Single |
| Do414_100um_P2_L (edge-coupled) | 100µm x 60 µm (trapezoidal) | 350 X 350 | 150 | PN-top | Single |
| DO458_240umSQ_P2_4x1 | 240um (Square) | 350 x 1400 (Pitch: 350um) | 150 | P-top, N-bottom | 4x1 Array |