Gallium Arsenide (GaAs) Technologies

Our complete GaAs technology portfolio offers a versatile range of processes—including InGaP HBTs, GaAs pHEMTs, RF Diodes, and RF Passives—optimized for cellular components and high-performance millimeter-wave (mmW) transceiver systems up to 40 GHz.

• InGaP HBT: A world-class family of processes, including D1, D5, and SPE (Gen 2), the InGaP HBT portfolio is tailored to deliver optimum power and superior linearity. These processes are optimized for critical RF applications ranging from low phase noise VCOs and voltage-tunable MMIC filters to high-efficiency amplifiers operating up to 15 GHz.
• GaAs pHEMT: Highly reliable processes, scaling from 0.5µm down to 0.1µm nodes, leverage both power and low-noise optimization to achieve robust performance up to 40 GHz. These technologies are engineered for demanding applications including high-linearity power amplifiers, low-noise receivers for the Ka-band, and integrated multifunction ICs.
• RF Diodes: A high-performance portfolio featuring THz Schottky diodes for low-loss mixing, varactor junction diodes for wide capacitance tuning ranges in 5G beamforming networks, and reliable RFPIN diodes for switching applications.
• RF Passives: High-Q LCR on GaAs integrated passive devices (IPD) providing optimized, compact, and low-cost manufacturing solutions for filter, matching, and off-chip network integration.