Advanced RF
Technologies for
Next-Gen Systems
Process Technology
Process Technology Table
| Technology | Process | Application |
| GaN HEMT | 0.4µm GaN/SiC | Wideband High Power Amplifier |
| 0.25µm GaN/SiC (Gen 2) | High Frequency High Power Amplifier, Sub-6 GHz MIMO | |
| 0.15µm GaN/SiC | mmW Frequency Amplifier, up to Ka-Band | |
| 0.25µm GaN/Si (6" Wafer) | Wideband PA for Low-Voltage Mobile, BTS & Phased Array Tx IC up to K-Band | |
| InGaP HBT Super-High fmax | D1 | Low Phase Noise VCO |
| D5 | Wide tuning range VCO, Voltage Tunable MMIC Filters | |
| SPE (Gen 2) | FR3 Amplifier up to 15 GHz | |
| InP HBT | DHBT3 & DHBT3B | Super-high-speed ICs |
| DHBT3B (Gen 2) Coming Soon | Ultra High FT > 400 GHz | |
| GaAs pHEMT | 0.5µm Power | PA and LNA up to 20 GHz |
| E/D-Mode pHEMT | Integrated Multifunction ICs | |
| 0.25µm Power | Amplifiers up to 40 GHz | |
| 0.25µm Low Noise | mmW Low Noise Receiver up to Ka-Band | |
| 0.1µm LN/Power | Low Noise & Power Amplifier | |
| RF Diodes | THz Schottky Diode | Low Loss Mixer up to mmW Frequencies |
| Varactor Junction Diode | Wide Capacitance Tuning Range for 5G Beam Forming Network | |
| RFPIN | RF Switches | |
| RF Passives | High-Q LCR on GaAs | Filter and Matching/Bias Network |
Technology Platform
RF Technology Platform
High-Power RF (GaN)
- GaN-on-SiC and GaN-on-Si HEMTs
- 0.4 µm to 0.15 µm processes
- High-voltage operation up to 100V
GaAs HBT (Super-High fmax)
- Low phase noise InGaP/GaAs HBT
- mmWave super-high fmax (>140 GHz)
- VCO, mixer, and high-speed ICs
- SPE Gen 2 up to 15 GHz (FR3)
Low Noise and Power RF (pHEMT)
- 0.5 µm down to 0.1 µm nodes
- High-gain LNAs & high-linearity power PAs
- E/D-mode and mmW V-band integration
InP HBT
- Industry-leading fT up to 340 GHz
- fmax >400 GHz (DHBT3B Gen 2)
- DHBT3 & DHBT3B processes
- TIAs, laser drivers, mixed-signal ICs
THz & RF Diodes
- Varactor, PIN, and Schottky nodes
- THz mixers & monolithic receivers
- Wide capacitance tuning structures
Integrated Passives (IPD)
- IPD high-Q passive matching
- Monolithic filter network design
- Low-loss GaAs substrates
System Applications
System Applications
Wireless communication systems are evolving from sub-6 GHz 5G toward mmWave 5G/6G and SATCOM platforms operating in Ku-band and above. These systems rely heavily on phased-array architectures requiring tightly matched RF front-end components, including high-efficiency power amplifiers, low-noise amplifiers, switches, and phase shifters.
GCS RF technologies enable scalable performance across these architectures with optimized GaN, GaAs, InP, and diode processes designed for power efficiency, linearity, and mmWave operation.
Technology Highlights
Technology Highlights
GaN HEMT technologies support drain voltages up to 100 V with backside via options in circular (50 µm) and oval (30 µm × 60 µm) geometries. Available processes include 0.4 µm, 0.25 µm, and 0.15 µm nodes optimized for high-power and rugged RF applications.
The GaAs HBT portfolio includes next-generation mmWave super-high fmax devices (>140 GHz) and mature InGaP HBT platforms optimized for wireless infrastructure and aerospace & defense systems.
GaAs HBT processes (fT up to 60 GHz) achieve ultra-low phase noise performance down to −165 dBc/Hz at 10 kHz offset and support VCOs, prescalers, and phase detector MMICs. The D5 varactor enables voltage-tunable filter designs through wide C–V tuning range.
THz Diode series enable mmWave mixer applications, while wide-tuning varactor technology supports beamforming phase shifters for 5G, SATCOM, and radar systems.
InP HBT technologies provide industry-leading speed (fT up to 340 GHz) for TIAs, laser drivers, mixed-signal ICs, and mmWave amplifiers.
pHEMT technologies support RF switches, LNAs, and power amplifiers. 0.25 µm LN pHEMT enables ultra-low noise operation with integrated functionality, while 0.1 µm processes extend performance into the V-band.
An IPD (Integrated Passive Device) process is available for high-frequency wide-band filter design and heterogeneous RF integration.
All processes undergo rigorous reliability qualification and have been validated by leading IDMs across the U.S., Europe, and Asia. Full qualification data including ALT, HTRB, and stress testing results are available upon request.