RF Semiconductor Foundry
Monolithic THz Mixer Diode
Process Summary
Schottky diode technology offering fco greater than 1 THz with four selectable barrier heights. Available as either a stand-alone diode or MMIC implementation, enabling monolithic integration to reduce parasitics. It supports low conversion loss mm-wave mixer operation up to W-band and meets or exceeds most environmental test requirements.
Typical Applications
- Low conversion loss mixers
- Up/down-converters for up to W-Band
- Low LO drive mixer with single, multiple, series or anti-parallel diode configurations
- Monolithically integrated options:
- Passive matching and filtering networks
- HBT or pHEMT integrated circuits
Process Features
- Planar diode process
- Ideality factor of 1.1
- Choice of turn-on voltage (0.3, 0.5, 0.65, and 0.85V)
- Passive thin-film resistor, MIM capacitor and transmission lines
- Air-bridge or polyimide interconnect options
- Backside via option available
- Mature manufacturing process
Typical Device Performance
Forward I-V Characteristics (1.6x8 mm² diode)
W-Band Up Converter | LO: 91.8 GHz | IF: 2.25 GHz | Diode: SBD 16×6 mm²
Mixer LinearityElectrical Characteristics
| Parameter | Is (fA) | N | Rs (Ohm) | Cjo (fF) @ 0.5 GHz | Cjo (fF) @ 20 GHz | Estimated Fco (THz) * |
| SBD 1.6x4 | 114 | 1.17 | 6.3 | 16.17 | 19.71 | 1.282 |
| SBD 1.6x6 | 195 | 1.17 | 4.5 | 22.76 | 27.11 | 1.305 |
| SBD 1.6x8 | 255 | 1.17 | 3.6 | 28.85 | 33.21 | 1.332 |