GaN HEMT Technologies

Our complete GaN HEMT portfolio scales across advanced GaN/SiC and cost-effective GaN/Si platforms from 0.40µm down to 0.15µm process nodes, delivering a versatile range of high-efficiency, wideband semiconductor solutions optimized for everything from low-voltage mobile handsets and high-power sub-6 GHz 5G infrastructure to high-frequency millimeter-wave (mmW) aerospace transceivers up to the Ka-band.

• 0.15µm GaN/SiC HEMT: Utilizing advanced 0.15µm electron-beam lithography to achieve an ultra-high maximum frequency (f_max) of 170 GHz, the 0.15µm GaN/SiC HEMT is optimized for millimeter-wave (mmW) transceiver components, delivering low-noise performance (NF_min of 0.77dB at 18 GHz) and robust power efficiency across the Ku and Ka-bands.
• 0.25µm GaN/SiC HEMT: Optimized for ultra-wideband power amplifiers and high-frequency switching up to the Ku-Band, the 0.25µm GaN/SiC HEMT leverages optical T-gate lithography to deliver exceptional power efficiency (78% PAE at 3.5 GHz) and reliable 48V operation across demanding 5G infrastructure and military radar platforms.
• 0.25µm GaN/Si HEMT (6-Inch Wafer): Engineered on a 6-inch wafer platform with optical T-gate lithography, this versatile node bridges the gap between high-volume consumer mobile devices and heavy infrastructure. It supports wide operating conditions from 3.5V low-voltage mobile phone PAs up to rugged 48V base stations, delivering an f_max of 85 GHz, highly efficient power saturation (Psat up to 10.5 W/mm at 48V), and monolithic integration paths for phased-array antenna switch components.
• 0.40µm GaN/SiC HEMT: Engineered for high-voltage efficiency, the 0.40µm GaN/SiC HEMT delivers an exceptional combination of high power density (up to 19.5 W/mm at 85V) and low switch resistance, making it the ideal rugged solution for next-generation sub-6 GHz 5G infrastructure and advanced military radar systems.