RF Semiconductor Foundry
RF PIN Diode
Process Summary
Low-loss monolithic RF PIN diode technology with a 70 V reverse breakdown voltage, offering fast switching speed and high-frequency operation capability. It meets or exceeds environmental requirements.
Process Features
- Planar MMIC-Compatible Process
- Low series resistance and off-state capacitance
- Low insertion loss and high isolation
- Fast Switching Speed
- Mature Manufacturing Process
Typical Applications
- Switch (Series and Shunt)
- Attenuator (Tee and Pi)
- Input Power Limiter
- Phase Shifter
Typical Device Performance
Forward I-V of 70V PIN Diode
Vbr of a 70V PIN Diode
Series Insertion Loss vs. FrequencyDevice Performance Table
| Diode Diameter | Rs @30 mA (Ω) | Rs at 50 mA (Ω) | Coff (fF) | Fco (THz) | Series Insertion Loss @ 5 GHz (dB) | Series Isolation @ 5 GHz (dB) |
| 25 µm | 1.20 | 0.80 | 30 | 4.4 | -0.17 | -20 |
| 40 µm | 1.15 | 0.75 | 60 | 2.3 | -0.15 | -14 |